Búsqueda de LIBROS DEL AUTOR: n mohankumar

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  • ADVANCED INDIUM ARSENIDE-BASED HEMT ARCHITECTURES FOR TERAHERTZ APPLICATIONS
    N. MOHANKUMAR
    High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and freq...

    $1,360.00