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  D(X) CENTRES AND OTHER METASTABLE DEFECTS IN SEMICONDUCTORS, PROCEEDINGS OF THE INT SYMPOSIUM, MAUTERNDORF, AUSTRIA, 18-22 FEBRUARY 1991

  W. JANTSCH Y R.A. STRADLING

  Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that ...

  $4,500.00

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